发明申请
- 专利标题: DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- 专利标题(中): 磁阻效应元件和磁记忆的数据写入方法
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申请号: US12561495申请日: 2009-09-17
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公开(公告)号: US20100073998A1公开(公告)日: 2010-03-25
- 发明人: Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
- 申请人: Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
- 优先权: JP2008-246719 20080925
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C7/00
摘要:
A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
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