发明申请
- 专利标题： STRUCTURE OF MEMS ELECTROACOUSTIC TRANSDUCER AND FABRICATING METHOD THEREOF
- 专利标题（中）： MEMS电磁传感器的结构及其制造方法
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申请号： US12233919申请日： 2008-09-19
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公开(公告)号： US20100074458A1公开(公告)日： 2010-03-25
- 发明人: Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
- 申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H04R3/00
- IPC分类号： H04R3/00 ; H04R31/00
摘要：
A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.
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