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公开(公告)号：US07898081B2
公开(公告)日：2011-03-01
申请号：US12168057
申请日：2008-07-03
申请人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Ming-I Wang
发明人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Ming-I Wang
CPC分类号： H04R31/00 , H04R2201/003 , Y10T29/49005
摘要： A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.
摘要翻译： MEMS器件包括设置在基板的同一侧上的通气孔结构和MEMS结构。 通气孔结构与MEMS结构相邻，其间具有蚀刻停止结构。 MEMS结构包括腔室，通气孔结构包括金属层，其上具有至少一个孔，作为通气孔，以通过蚀刻停止结构连接MEMS结构的室。 因此，MEMS器件具有侧向通气孔。 此外，由于通气孔结构和MEMS结构设置在基板的同一侧，所以制造过程方便且节省时间。
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2.发明申请公开(公告)号：US20100074458A1
公开(公告)日：2010-03-25
申请号：US12233919
申请日：2008-09-19
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
CPC分类号： B81B3/0021 , B81B2201/0271 , H04R3/00 , H04R7/00 , H04R19/005 , H04R31/00 , H04R2499/11 , Y10T29/49002
摘要： A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.
摘要翻译： 微电子机械系统（MEMS）电声换能器的结构包括基板，隔膜，硅材料层和导电图案。 衬底包括MEMS器件区域。 隔膜具有开口，并且设置在MEMS器件区域中。 在隔膜和基板之间形成第一空腔。 硅材料层设置在隔膜上并密封隔膜。 导电图案设置在MEMS器件区域中的隔膜下方。
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公开(公告)号：US20100002894A1
公开(公告)日：2010-01-07
申请号：US12168057
申请日：2008-07-03
申请人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Ming-I Wang
发明人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Ming-I Wang
CPC分类号： H04R31/00 , H04R2201/003 , Y10T29/49005
摘要： A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.
摘要翻译： MEMS器件包括设置在基板的同一侧上的通气孔结构和MEMS结构。 通气孔结构与MEMS结构相邻，其间具有蚀刻停止结构。 MEMS结构包括腔室，通气孔结构包括金属层，其上具有至少一个孔，作为通气孔，以通过蚀刻停止结构连接MEMS结构的室。 因此，MEMS器件具有侧向通气孔。 此外，由于通气孔结构和MEMS结构设置在基板的同一侧，所以制造过程方便且节省时间。
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4.发明授权公开(公告)号：US08798291B2
公开(公告)日：2014-08-05
申请号：US12233919
申请日：2008-09-19
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
IPC分类号： H04R31/00
CPC分类号： B81B3/0021 , B81B2201/0271 , H04R3/00 , H04R7/00 , H04R19/005 , H04R31/00 , H04R2499/11 , Y10T29/49002
摘要： A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.
摘要翻译： 微电子机械系统（MEMS）电声换能器的结构包括基板，隔膜，硅材料层和导电图案。 衬底包括MEMS器件区域。 隔膜具有开口，并且设置在MEMS器件区域中。 在隔膜和基板之间形成第一空腔。 硅材料层设置在隔膜上并密封隔膜。 导电图案设置在MEMS器件区域中的隔膜下方。
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公开(公告)号：US08096048B2
公开(公告)日：2012-01-17
申请号：US12849168
申请日：2010-08-03
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and a MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form a MEMS device in the MEMS region.
摘要翻译： MEMS的制造方法如下所述。 提供了包括彼此分离的电路区域和MEMS区域的衬底。 第一金属互连结构形成在电路区域中的衬底上，并且同时在MEMS区域中的衬底上形成第一电介质结构。 第二金属互连结构形成在第一金属互连结构上，并且同时具有第二电介质结构，至少两个金属层和至少一个保护环形成在第一电介质结构上。 金属层和保护环形成在第二电介质结构中，并且保护环连接两个相邻的金属层以限定两个相邻金属层之间的封闭空间。 去除封闭空间外部的第一电介质结构和第二电介质结构，以在MEMS区域中形成MEMS器件。
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公开(公告)号：US20100317138A1
公开(公告)日：2010-12-16
申请号：US12849168
申请日：2010-08-03
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： H01L21/768
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and an MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form an MEMS device in the MEMS region.
摘要翻译： MEMS的制造方法如下所述。 提供了包括彼此分离的电路区域和MEMS区域的衬底。 第一金属互连结构形成在电路区域中的衬底上，并且同时在MEMS区域中的衬底上形成第一电介质结构。 第二金属互连结构形成在第一金属互连结构上，并且同时具有第二电介质结构，至少两个金属层和至少一个保护环形成在第一电介质结构上。 金属层和保护环形成在第二电介质结构中，并且保护环连接两个相邻的金属层以限定两个相邻金属层之间的封闭空间。 除去封闭空间外的第一电介质结构和第二电介质结构，以在MEMS区域中形成MEMS器件。
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公开(公告)号：US07851975B2
公开(公告)日：2010-12-14
申请号：US12202563
申请日：2008-09-02
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.
摘要翻译： 描述了微机电系统（MEMS）结构及其制造方法。 MEMS结构包括固定部分和可动部分。 固定部分设置在基板上并与基板连接。 包括至少两个第一金属层，第一保护环和第一介电层的可移动部分悬挂在基板上。 第一保护环连接两个相邻的第一金属层，以限定两个相邻的第一金属层之间的第一封闭空间。 第一介电层设置在封闭空间中，并且连接两个相邻的第一金属层。
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公开(公告)号：US20100052179A1
公开(公告)日：2010-03-04
申请号：US12202563
申请日：2008-09-02
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.
摘要翻译： 描述了微机电系统（MEMS）结构及其制造方法。 MEMS结构包括固定部分和可动部分。 固定部分设置在基板上并与基板连接。 包括至少两个第一金属层，第一保护环和第一介电层的可移动部分悬挂在基板上。 第一保护环连接两个相邻的第一金属层，以限定两个相邻的第一金属层之间的第一封闭空间。 第一介电层设置在封闭空间中，并且连接两个相邻的第一金属层。
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9.发明授权Integrated structure for MEMS device and semiconductor device and method of fabricating the same 有权MEMS器件和半导体器件的集成结构及其制造方法公开(公告)号：US08872287B2
公开(公告)日：2014-10-28
申请号：US12056286
申请日：2008-03-27
申请人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Tzung-I Su , Chien-Hsin Huang
发明人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Tzung-I Su , Chien-Hsin Huang
CPC分类号： B81C1/00246 , B81C1/00801 , B81C2201/014 , B81C2203/0714 , B81C2203/0742 , B81C2203/0792 , H01L27/0688
摘要： The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping element is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping element has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.
摘要翻译： 本发明涉及用于MEMS器件和半导体器件的集成结构及其制造方法，其中在MEMS器件和半导体器件之间的衬底上包括蚀刻停止元件，用于保护半导体器件免受横向 执行氧化物释放处理以制造MEMS器件时的损坏。 蚀刻停止元件具有各种形状，并且通过单独的制造工艺选择性地形成，或者在相同的制造工艺中与半导体器件同时形成。 它是单一结构或组合堆叠的多层结构，例如，多排支柱抗蚀刻材料插塞，一个或多个壁状耐蚀刻材料插塞或其堆叠的多层结构 和耐蚀刻材料层。
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10.发明申请Integrated structure for MEMS device and semiconductor device and method of fabricating the same 有权MEMS器件和半导体器件的集成结构及其制造方法公开(公告)号：US20090243004A1
公开(公告)日：2009-10-01
申请号：US12056286
申请日：2008-03-27
申请人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Tzung-I Su , Chien-Hsin Huang
发明人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Tzung-I Su , Chien-Hsin Huang
CPC分类号： B81C1/00246 , B81C1/00801 , B81C2201/014 , B81C2203/0714 , B81C2203/0742 , B81C2203/0792 , H01L27/0688
摘要： The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping device is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping device has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.
摘要翻译： 本发明涉及用于MEMS器件和半导体器件的集成结构及其制造方法，其中在MEMS器件和半导体器件之间的衬底上包括蚀刻停止器件，用于保护半导体器件免受横向 执行氧化物释放处理以制造MEMS器件时的损坏。 蚀刻停止装置具有各种形状，并且通过单独的制造工艺选择性地形成，或者在相同的制造工艺中与半导体器件同时形成。 它是单一结构或组合堆叠的多层结构，例如多排支撑的耐蚀刻材料插塞，一个或多个壁状耐蚀刻材料插塞或其堆叠的多层结构 和耐蚀刻材料层。
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