发明申请
US20100075443A1 TEMPLATE INSPECTION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
有权
用于半导体器件的模板检测方法和制造方法
- 专利标题: TEMPLATE INSPECTION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- 专利标题(中): 用于半导体器件的模板检测方法和制造方法
-
申请号: US12553906申请日: 2009-09-03
-
公开(公告)号: US20100075443A1公开(公告)日: 2010-03-25
- 发明人: Ikuo YONEDA , Tetsuro Nakasugi , Masamitsu Itoh , Ryoichi Inanami
- 申请人: Ikuo YONEDA , Tetsuro Nakasugi , Masamitsu Itoh , Ryoichi Inanami
- 优先权: JP2008-245559 20080925
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; G06K9/00
摘要:
A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.
公开/授权文献
信息查询
IPC分类: