发明申请
- 专利标题： MIIM DIODES
- 专利标题（中）： MIIM二极管
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申请号： US12240766申请日： 2008-09-29
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公开(公告)号： US20100078758A1公开(公告)日： 2010-04-01
- 发明人: Deepak C. Sekar , Tanmay Kumar , Peter Rabkin , Xiying Chen
- 申请人： Deepak C. Sekar , Tanmay Kumar , Peter Rabkin , Xiying Chen
- 主分类号： H01L29/861
- IPC分类号： H01L29/861 ; G11C11/50 ; H01L21/44
摘要：
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises a first electrode comprising a first metal, a first region comprising a first insulating material, a second region comprising a second insulating material, and a second electrode comprising a second metal. The first region and the second region reside between the first electrode and the second electrode. The second insulating material is doped with nitrogen. Note that the second insulating material may have an interface with either the first electrode or the second electrode.
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