发明申请
US20100080048A1 STT-MRAM CELL STRUCTURE INCORPORATING PIEZOELECTRIC STRESS MATERIAL
有权
STT-MRAM结构与压电应力材料
- 专利标题： STT-MRAM CELL STRUCTURE INCORPORATING PIEZOELECTRIC STRESS MATERIAL
- 专利标题（中）： STT-MRAM结构与压电应力材料
-
申请号： US12242247申请日： 2008-09-30
-
公开(公告)号： US20100080048A1公开(公告)日： 2010-04-01
- 发明人: Jun Liu , Steve Kramer , Gurtej Sandhu
- 申请人： Jun Liu , Steve Kramer , Gurtej Sandhu
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： G11C11/02
- IPC分类号： G11C11/02
摘要：
A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.
公开/授权文献
信息查询
