发明申请
- 专利标题: METHOD FOR PASSIVATING EXPOSED COPPER SURFACES IN A METALLIZATION LAYER OF A SEMICONDUCTOR DEVICE
- 专利标题(中): 在半导体器件的金属化层中钝化铜表面的方法
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申请号: US12555844申请日: 2009-09-09
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公开(公告)号: US20100081277A1公开(公告)日: 2010-04-01
- 发明人: Matthias Schaller , Daniel Fischer , Susanne Leppack
- 申请人: Matthias Schaller , Daniel Fischer , Susanne Leppack
- 优先权: DE102008049720.7 20080930
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.
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