发明申请
- 专利标题: IMPLANT UNIFORMITY CONTROL
- 专利标题(中): 植入均质控制
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申请号: US12244001申请日: 2008-10-02
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公开(公告)号: US20100084581A1公开(公告)日: 2010-04-08
- 发明人: Victor M. Benveniste , Antonella Cucchetti , Bon-Woong Koo
- 申请人: Victor M. Benveniste , Antonella Cucchetti , Bon-Woong Koo
- 主分类号: H01J37/08
- IPC分类号: H01J37/08
摘要:
An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
公开/授权文献
- US07820988B2 Implant uniformity control 公开/授权日:2010-10-26