发明申请
- 专利标题： Low noise magneto-resistive sensor utilizing magnetic noise cancellation
- 专利标题（中）： 利用磁噪声消除的低噪声磁阻传感器
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申请号： US12287279申请日： 2008-10-08
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公开(公告)号： US20100085666A1公开(公告)日： 2010-04-08
- 发明人: Yuchen Zhou , Kunliang Zhang , Yu-Hsai Chen , Tong Zhao , Moris Dovek
- 申请人： Yuchen Zhou , Kunliang Zhang , Yu-Hsai Chen , Tong Zhao , Moris Dovek
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 主分类号： G11B5/127
- IPC分类号： G11B5/127 ; B05D5/12
摘要：
A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically coupled in a weak antiferromagnetic mode. This enables the low frequency noise spectra of the two free layers to cancel one another. Careful control of the SH/TW ratio is an important feature of the device
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