发明申请
- 专利标题： Operation method of non-volatile memory
- 专利标题（中）： 非易失性存储器的操作方法
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申请号： US12457464申请日： 2009-06-11
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公开(公告)号： US20100085821A1公开(公告)日： 2010-04-08
- 发明人: Seungeon Ahn , Keewon Kwon , Jaechul Park , Youngsoo Park , Myoungjae Lee
- 申请人： Seungeon Ahn , Keewon Kwon , Jaechul Park , Youngsoo Park , Myoungjae Lee
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0097786 20081006
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C11/00
摘要：
Example embodiments provide a method of operating a non-volatile memory in which the non-volatile memory may only be changed from a first state to a second state and may not be changed from the second state to the first state during a programming operation.
公开/授权文献
- US08234438B2 Operation method of non-volatile memory 公开/授权日：2012-07-31
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