Invention Application
US20100089320A1 PLASMA PROCESSING MEMBER, DEPOSITION APPARATUS INCLUDING THE SAME, AND DEPOSITING METHOD USING THE SAME
有权
等离子体处理构件，包括其的沉积装置和使用其的沉积方法
- Patent Title: PLASMA PROCESSING MEMBER, DEPOSITION APPARATUS INCLUDING THE SAME, AND DEPOSITING METHOD USING THE SAME
- Patent Title (中): 等离子体处理构件，包括其的沉积装置和使用其的沉积方法
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Application No.: US12577885Application Date: 2009-10-13
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Publication No.: US20100089320A1Publication Date: 2010-04-15
- Inventor: Ki Jong KIM , Hyun Kyu Cho , Jin Su Lee , Se Yong Kim
- Applicant: Ki Jong KIM , Hyun Kyu Cho , Jin Su Lee , Se Yong Kim
- Applicant Address: KR Cheonan-si
- Assignee: ASM Genitech Korea Ltd.
- Current Assignee: ASM Genitech Korea Ltd.
- Current Assignee Address: KR Cheonan-si
- Priority: KR10-2008-0100300 20081013
- Main IPC: C23C16/513
- IPC: C23C16/513
Abstract:
A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reaction spaces, a plurality of plasma electrodes respectively disposed in the reaction spaces, a first plasma processor connected to at least two plasma electrodes, and a first plasma power source connected to the first plasma processor. The first plasma processor may include a plasma distributor or a plasma splitter.
Public/Granted literature
- US09371583B2 Plasma processing member, deposition apparatus including the same, and depositing method using the same Public/Granted day:2016-06-21
Information query
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