发明申请
- 专利标题: VOLTAGE DETECTION CIRCUIT AND BGR VOLTAGE DETECTION CIRCUIT
- 专利标题(中): 电压检测电路和BGR电压检测电路
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申请号: US12563980申请日: 2009-09-21
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公开(公告)号: US20100090727A1公开(公告)日: 2010-04-15
- 发明人: Ryu Ogiwara , Daisaburo Takashima
- 申请人: Ryu Ogiwara , Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-266042 20081015
- 主分类号: H03K5/153
- IPC分类号: H03K5/153 ; H03K5/00
摘要:
A voltage detection circuit of the present invention includes an NMOS transistor diode-connected, a gate and a drain thereof being supplied with a power supply voltage, a resistor connected between a source of the NMOS transistor and a ground potential, and a source voltage detection circuit receiving a voltage of the source, wherein an NMOS type transistor is employed as the NMOS transistor, a channel width and a channel length of the NMOS type transistor being set in such a manner that an operating point on a VG-ID curve of the NMOS type transistor may come to a certain point, at the certain point, a drain current of the NMOS type transistor being constant even if the temperature fluctuates.
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