发明申请
- 专利标题： Complementary Alignment Marks for Imprint Lithography
- 专利标题（中）： 用于印记平版印刷的互补对准标记
-
申请号： US12575834申请日： 2009-10-08
-
公开(公告)号： US20100092599A1公开(公告)日： 2010-04-15
- 发明人: Kosta S. Selinidis , Gerard M. Schmid , Ecron D. Thompson , Ian Matthew McMackin , Douglas J. Resnick
- 申请人： Kosta S. Selinidis , Gerard M. Schmid , Ecron D. Thompson , Ian Matthew McMackin , Douglas J. Resnick
- 申请人地址： US TX Austin
- 专利权人： MOLECULAR IMPRINTS, INC.
- 当前专利权人： MOLECULAR IMPRINTS, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： B29C59/00
- IPC分类号： B29C59/00
摘要：
Systems and methods for minimizing overlay error during alignment of a template with a substrate are described. Templates generally include two distinct types of alignment marks: buried alignment marks and complementary alignment marks. Buried marks may be fabricated separately from the patterning surface, and the complementary marks may be fabricated in the same step as the patterning surface.
信息查询
