发明申请
- 专利标题： LAMINAR STRUCTURE ON A SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 半导体衬底上的层状结构
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申请号： US12450182申请日： 2007-12-12
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公开(公告)号： US20100096666A1公开(公告)日： 2010-04-22
- 发明人: Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikinori Ito , Mikito Otonari , Kenro Kikuchi , Yiping Guo
- 申请人： Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikinori Ito , Mikito Otonari , Kenro Kikuchi , Yiping Guo
- 申请人地址： JP Toyohashi-shi, Aichi
- 专利权人： National University Corporation Toyohashi University of Technology
- 当前专利权人： National University Corporation Toyohashi University of Technology
- 当前专利权人地址： JP Toyohashi-shi, Aichi
- 优先权： JP2007-066393 20070315; JP2007-152277 20070608
- 国际申请： PCT/JP2007/073922 WO 20071212
- 主分类号： H01L23/14
- IPC分类号： H01L23/14
摘要：
An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-Al2O3 formed as a buffer layer on a silicon substrate.The monocrystalline γ-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline γ-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.
公开/授权文献
- US08183594B2 Laminar structure on a semiconductor substrate 公开/授权日：2012-05-22
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