发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12588202申请日: 2009-10-07
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公开(公告)号: US20100096723A1公开(公告)日: 2010-04-22
- 发明人: Hiroshi Tsuda , Yoshitaka Kubota , Hiromichi Takaoka
- 申请人: Hiroshi Tsuda , Yoshitaka Kubota , Hiromichi Takaoka
- 申请人地址: JP Kawasaki-shi
- 专利权人: NEC ELECTRONICS CORPORATION
- 当前专利权人: NEC ELECTRONICS CORPORATION
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP2008-269004 20081017
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an upper-layer fuse wiring, a lower-layer fuse wiring, and a via connecting the upper-layer fuse wiring and the lower-layer fuse wiring, an upper-layer lead-out wiring which connects the upper-layer fuse wiring and the first large area wiring and has a bent pattern, and a lower-layer lead-out wiring which connects the lower-layer fuse wiring and the second large area wiring and has a bent pattern.
公开/授权文献
- US08080861B2 Semiconductor device 公开/授权日:2011-12-20
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