发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造
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申请号： US12644971申请日： 2009-12-22
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公开(公告)号： US20100097157A1公开(公告)日： 2010-04-22
- 发明人: Fumitaka NAKAYAMA , Masatoshi MORIKAWA , Yutaka HOSHINO , Tetsuo UCHIYAMA
- 申请人： Fumitaka NAKAYAMA , Masatoshi MORIKAWA , Yutaka HOSHINO , Tetsuo UCHIYAMA
- 优先权： JP2002-282366 20020927; JP2002-377030 20021226
- 主分类号： H03H7/38
- IPC分类号： H03H7/38 ; H01L27/06 ; H03H2/00
摘要：
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
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