发明申请
US20100102332A1 METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE
有权
在P型4H-SIC基板上形成OHMIC接触的方法
- 专利标题： METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE
- 专利标题（中）： 在P型4H-SIC基板上形成OHMIC接触的方法
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申请号： US12530901申请日： 2008-03-13
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公开(公告)号： US20100102332A1公开(公告)日： 2010-04-29
- 发明人: Yasuo Takahashi , Masakatsu Maeda , Akinori Seki , Akira Kawahashi , Masahiro Sugimoto
- 申请人： Yasuo Takahashi , Masakatsu Maeda , Akinori Seki , Akira Kawahashi , Masahiro Sugimoto
- 申请人地址： JP Suita-shi, Osaka JP Toyota-shi, Aichi-ken
- 专利权人： OSAKA UNIVERSITY,TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： OSAKA UNIVERSITY,TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Suita-shi, Osaka JP Toyota-shi, Aichi-ken
- 优先权： JP2007-063814 20070313
- 国际申请： PCT/JP2008/055158 WO 20080313
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/768
摘要：
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.