Invention Application
- Patent Title: GERMANIUM PHOTODETECTOR AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 锗光电转换器及其制造方法
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Application No.: US12404275Application Date: 2009-03-13
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Publication No.: US20100102412A1Publication Date: 2010-04-29
- Inventor: Dongwoo SUH , Sam Hoon KIM , Gyungock KIM , JiHo JOO
- Applicant: Dongwoo SUH , Sam Hoon KIM , Gyungock KIM , JiHo JOO
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2008-105199 20081027
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/20
Abstract:
Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Public/Granted literature
- US08698271B2 Germanium photodetector and method of fabricating the same Public/Granted day:2014-04-15
Information query
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