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    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120145999A1

    公开(公告)日：2012-06-14

    申请号：US13193690

    申请日：2011-07-29

    Applicant: Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    Inventor： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    IPC: H01L29/775 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/336

    CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

    Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

    Abstract translation: 提供半导体器件及其制造方法。 该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域 表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开， 并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

    Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor
    2.
    发明授权
    Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor 有权
    具有改进的Q因子的变容二极管及其使用SiGe异质结双极晶体管的制造方法

    公开(公告)号：US06686640B2

    公开(公告)日：2004-02-03

    申请号：US10044107

    申请日：2002-01-11

    Applicant: Bongki Mheen ,  Dongwoo Suh ,  Jin-Yeong Kang

    Inventor： Bongki Mheen ,  Dongwoo Suh ,  Jin-Yeong Kang

    IPC: H01L2993

    CPC classification number: H01L29/66174 ,  H01L29/66242 ,  H01L29/93

    Abstract: A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity type formed on a first surface of the high-concentration buried collector region, a high-concentration collector contact region of the second conductivity type formed on a second surface of the high-concentration buried collector region, a high-concentration silicon-germanium base region of the first conductivity type formed on the collector region, a metal silicide layer formed on the silicon-germanium base region, a first electrode layer formed to contact the metal silicide layer, and a second electrode layer formed to be electrically connected to the collector contact region.

    Abstract translation: 变容二极管包括第一导电类型的半导体衬底，形成在半导体衬底的上部的第二导电类型的高浓度集电区，在第一表面上形成第二导电类型的集电极区 浓度埋集电极区域，形成在高浓度埋集体区域的第二表面上的第二导电类型的高浓度集电极接触区域，形成在集电体上的第一导电类型的高浓度硅 - 锗基区域 形成在硅 - 锗基区上的金属硅化物层，形成为与金属硅化物层接触的第一电极层和形成为与集电极接触区电连接的第二电极层。

    MONOLITHIC INTEGRATED COMPOSITE DEVICE HAVING SILICON INTEGRATED CIRCUIT AND SILICON OPTICAL DEVICE INTEGRATED THEREON, AND FABRICATION METHOD THEREOF
    4.
    发明申请
    MONOLITHIC INTEGRATED COMPOSITE DEVICE HAVING SILICON INTEGRATED CIRCUIT AND SILICON OPTICAL DEVICE INTEGRATED THEREON, AND FABRICATION METHOD THEREOF 有权
    具有硅集成电路的单片集成复合器件及其集成的硅光学器件及其制造方法

    公开(公告)号：US20100044828A1

    公开(公告)日：2010-02-25

    申请号：US12441377

    申请日：2007-04-03

    Applicant: Dongwoo Suh ,  Gyungock Kim

    Inventor： Dongwoo Suh ,  Gyungock Kim

    IPC: H01L29/06

    CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

    Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

    Waveguide photo-detector
    7.
    发明授权
    Waveguide photo-detector 有权
    波导光电探测器

    公开(公告)号：US08823121B2

    公开(公告)日：2014-09-02

    申请号：US13550364

    申请日：2012-07-16

    Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    IPC: H01L31/00 ,  G02B6/12 ,  H01L31/0352 ,  G02B6/13 ,  G02B6/136

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

    Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

    Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

    WAVEGUIDE PHOTO-DETECTOR
    9.
    发明申请
    WAVEGUIDE PHOTO-DETECTOR 有权
    波形检测器

    公开(公告)号：US20120280347A1

    公开(公告)日：2012-11-08

    申请号：US13550364

    申请日：2012-07-16

    Applicant: Dongwoo SUH ,  Sanghoon KIM ,  Jiho JOO ,  Gyungock KIM

    Inventor： Dongwoo SUH ,  Sanghoon KIM ,  Jiho JOO ,  Gyungock KIM

    IPC: H01L31/0232

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

    Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

    Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

    Waveguide photo-detector
    10.
    发明授权
    Waveguide photo-detector 有权
    波导光电探测器

    公开(公告)号：US08242571B2

    公开(公告)日：2012-08-14

    申请号：US12763990

    申请日：2010-04-20

    Applicant: Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    Inventor： Dongwoo Suh ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

    IPC: H01L31/0232 ,  G02B6/42

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

    Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

    Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

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