发明申请
US20100104988A1 SUBSTRATE TREATING METHOD, SUBSTRATE-PROCESSING APPARATUS, DEVELOPING METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF CLEANING A DEVELOPING SOLUTION NOZZLE
审中-公开
基板处理方法，基板处理装置，开发方法，制造半导体器件的方法和清洁发展中的解决方案喷嘴的方法
- 专利标题： SUBSTRATE TREATING METHOD, SUBSTRATE-PROCESSING APPARATUS, DEVELOPING METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF CLEANING A DEVELOPING SOLUTION NOZZLE
- 专利标题（中）： 基板处理方法，基板处理装置，开发方法，制造半导体器件的方法和清洁发展中的解决方案喷嘴的方法
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申请号： US12651062申请日： 2009-12-31
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公开(公告)号： US20100104988A1公开(公告)日： 2010-04-29
- 发明人: Kei HAYASAKI , Shinichi ITO , Tatsuhiko EMA , Riichiro TAKAHASHI
- 申请人： Kei HAYASAKI , Shinichi ITO , Tatsuhiko EMA , Riichiro TAKAHASHI
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2002-017937 20020128; JP2002-057764 20020304
- 主分类号： G03F7/40
- IPC分类号： G03F7/40
摘要：
There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment.
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