公开(公告)号：US20100104988A1

公开(公告)日：2010-04-29

申请号：US12651062

申请日：2009-12-31

申请人： Kei HAYASAKI ,  Shinichi ITO ,  Tatsuhiko EMA ,  Riichiro TAKAHASHI

发明人： Kei HAYASAKI ,  Shinichi ITO ,  Tatsuhiko EMA ,  Riichiro TAKAHASHI

IPC分类号： G03F7/40

CPC分类号： G03F7/3021 ,  H01L21/31133 ,  Y10S134/902

摘要： There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment.

摘要翻译： 公开了一种显影方法，该方法包括使曝光的光敏抗蚀剂膜进行第一显影处理，其中曝光所需图案的光敏抗蚀剂膜显影; 将相对于抗蚀剂膜的表面具有氧化性或碱性的清洗溶液提供给经受第一显影处理的感光性抗蚀剂膜，以进行第一清洗处理; 对经受第一清洗处理的感光性抗蚀剂膜进行第二显影处理; 对进行了第二显影处理的感光性抗蚀剂膜进行第二次清洗处理。