发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12652311申请日: 2010-01-05
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公开(公告)号: US20100105174A1公开(公告)日: 2010-04-29
- 发明人: Kuniharu Muto , Toshiyuki Hata , Hiroshi Sato , Hiroi Oka , Osamu Ikeda
- 申请人: Kuniharu Muto , Toshiyuki Hata , Hiroshi Sato , Hiroi Oka , Osamu Ikeda
- 专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人: RENESAS TECHNOLOGY CORP.
- 优先权: JP2007-118822 20070427; JP2007-162684 20070620
- 主分类号: H01L21/60
- IPC分类号: H01L21/60
摘要:
To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.
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