发明申请
- 专利标题： METHOD OF FORMING AN INTERCONNECT STRUCTURE
- 专利标题（中）： 形成互连结构的方法
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申请号： US12444677申请日： 2007-10-05
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公开(公告)号： US20100105202A1公开(公告)日： 2010-04-29
- 发明人: Roel Daamen
- 申请人： Roel Daamen
- 申请人地址： NL Eindhoven
- 专利权人： NXP, B.V.
- 当前专利权人： NXP, B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP06122003.4 20061009; IBPCT/IB2007/054070 20071005
- 国际申请： PCT/IB07/54070 WO 20071005
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of forming an interconnect structure in a semiconductor device in which via holes (62) defined in a dielectric layer are filled with a filler material (64), such as a porogen material, before a further dielectric layer (66) is deposited thereover. Trenches (72) are formed in the further dielectric layer and then the filler material exposed thereby in the via holes is removed. The method provides a robust process which affords improved via and trench profile control.
公开/授权文献
- US07790606B2 Method of forming an interconnect structure 公开/授权日：2010-09-07
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