Invention Application
US20100108093A1 ACOUSTIC ASSISTED SINGLE WAFER WET CLEAN FOR SEMICONDUCTOR WAFER PROCESS
有权
用于半导体波形过程的声学辅助单波浪清洁
- Patent Title: ACOUSTIC ASSISTED SINGLE WAFER WET CLEAN FOR SEMICONDUCTOR WAFER PROCESS
- Patent Title (中): 用于半导体波形过程的声学辅助单波浪清洁
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Application No.: US12262094Application Date: 2008-10-30
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Publication No.: US20100108093A1Publication Date: 2010-05-06
- Inventor: Grant Peng , David Mui , Shih-Chung Kon
- Applicant: Grant Peng , David Mui , Shih-Chung Kon
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corp.
- Current Assignee: Lam Research Corp.
- Current Assignee Address: US CA Fremont
- Main IPC: B08B3/12
- IPC: B08B3/12

Abstract:
A method for cleaning a substrate is provided that includes applying a liquid medium to a surface of the substrate such that the liquid medium substantially covers a portion of the substrate that is being cleaned. One or more transducers are used to generate acoustic energy. The generated acoustic energy is applied to the substrate and the liquid medium meniscus such that the applied acoustic energy to the liquid medium prevents cavitation within the liquid medium. The acoustic energy applied to the substrate provides maximum acoustic wave displacement to acoustic waves introduced into the liquid medium. The acoustic energy introduced into the substrate and the liquid medium enables dislodging of the particle contaminant from the surface of the substrate. The dislodged particle contaminants become entrapped within the liquid medium and are carried away from the surface of the substrate by the liquid medium.
Public/Granted literature
- US08585825B2 Acoustic assisted single wafer wet clean for semiconductor wafer process Public/Granted day:2013-11-19
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