发明申请
US20100108093A1 ACOUSTIC ASSISTED SINGLE WAFER WET CLEAN FOR SEMICONDUCTOR WAFER PROCESS
有权
用于半导体波形过程的声学辅助单波浪清洁
- 专利标题： ACOUSTIC ASSISTED SINGLE WAFER WET CLEAN FOR SEMICONDUCTOR WAFER PROCESS
- 专利标题（中）： 用于半导体波形过程的声学辅助单波浪清洁
-
申请号： US12262094申请日： 2008-10-30
-
公开(公告)号： US20100108093A1公开(公告)日： 2010-05-06
- 发明人: Grant Peng , David Mui , Shih-Chung Kon
- 申请人： Grant Peng , David Mui , Shih-Chung Kon
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corp.
- 当前专利权人： Lam Research Corp.
- 当前专利权人地址： US CA Fremont
- 主分类号： B08B3/12
- IPC分类号： B08B3/12
摘要：
A method for cleaning a substrate is provided that includes applying a liquid medium to a surface of the substrate such that the liquid medium substantially covers a portion of the substrate that is being cleaned. One or more transducers are used to generate acoustic energy. The generated acoustic energy is applied to the substrate and the liquid medium meniscus such that the applied acoustic energy to the liquid medium prevents cavitation within the liquid medium. The acoustic energy applied to the substrate provides maximum acoustic wave displacement to acoustic waves introduced into the liquid medium. The acoustic energy introduced into the substrate and the liquid medium enables dislodging of the particle contaminant from the surface of the substrate. The dislodged particle contaminants become entrapped within the liquid medium and are carried away from the surface of the substrate by the liquid medium.
公开/授权文献
信息查询
IPC分类:
