发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAIN
- 专利标题（中）： 集成电路系统采用高压排水
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申请号： US12262120申请日： 2008-10-30
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公开(公告)号： US20100109097A1公开(公告)日： 2010-05-06
- 发明人: Guowei Zhang , Yisuo Li , Ming Li , Purakh Raj Verma , Shao-fu Sanford Chu
- 申请人： Guowei Zhang , Yisuo Li , Ming Li , Purakh Raj Verma , Shao-fu Sanford Chu
- 申请人地址： SG Singapore
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78
摘要：
A method for manufacturing an integrated circuit system that includes: providing a substrate including an active device; forming a drift region in the substrate, the drift region bounded in part by a top surface of the substrate and spaced apart from a source; and forming a drain above the drift region.
公开/授权文献
- US07951680B2 Integrated circuit system employing an elevated drain 公开/授权日：2011-05-31
信息查询
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