发明申请
- 专利标题： SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT
- 专利标题（中）： 包括内部电压发生电路的半导体器件
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申请号： US12683838申请日： 2010-01-07
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公开(公告)号： US20100109761A1公开(公告)日： 2010-05-06
- 发明人: Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
- 申请人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-069086 20060314
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
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