发明申请
US20100110749A1 Semiconductor memory device having driver for compensating for parasitic resistance of data input-output pads
有权
半导体存储器件具有用于补偿数据输入 - 输出焊盘的寄生电阻的驱动器
- 专利标题： Semiconductor memory device having driver for compensating for parasitic resistance of data input-output pads
- 专利标题（中）： 半导体存储器件具有用于补偿数据输入 - 输出焊盘的寄生电阻的驱动器
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申请号： US12461141申请日： 2009-08-03
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公开(公告)号： US20100110749A1公开(公告)日： 2010-05-06
- 发明人: Hae-young Chung , Yang-ki Kim , Seok-woo Choi
- 申请人： Hae-young Chung , Yang-ki Kim , Seok-woo Choi
- 优先权： KR10-2008-0109040 20081104
- 主分类号： G11C5/06
- IPC分类号： G11C5/06 ; H01S4/00 ; G11C8/08
摘要：
A semiconductor memory device that includes a supply voltage pad, a ground voltage pad, and at least two data input/output pads arranged between the supply voltage pad and the ground voltage pad. The semiconductor memory device has a first pull-up driver that is connected to the second data input/output pad located at a first distance from the supply voltage pad, and a first pull-down driver that is connected to the first data input/output pad located at a second distance from the ground voltage pad.