发明申请
- 专利标题: NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 非易失性半导体存储器件
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申请号: US12553616申请日: 2009-09-03
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公开(公告)号: US20100110750A1公开(公告)日: 2010-05-06
- 发明人: Toshimasa Namekawa
- 申请人: Toshimasa Namekawa
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-283230 20081104
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C7/10 ; G11C5/14 ; G11C8/08
摘要:
The row decoder receives writing instruction signal and reading instruction signal to selectively activate one of the word lines according to an input state of row address signals. The data buffer receives a data input signal when the writing instruction signal is received, and drives corresponding one of the bit lines and amplifies a minute reading signal transmitted to one of the bit lines to output a data output signal when the reading instruction signal is received.The power supply circuit supplies a certain voltage to the memory cell, and in response to the reading instruction signal, keeps the voltage at a ground potential.
公开/授权文献
- US08045414B2 Non-volatile semiconductor memory device 公开/授权日:2011-10-25
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