发明申请
- 专利标题: SEMICONDUCTOR STORAGE DEVICE
- 专利标题(中): 半导体存储设备
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申请号: US12603623申请日: 2009-10-22
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公开(公告)号: US20100110751A1公开(公告)日: 2010-05-06
- 发明人: Kentaro Miyajima , Takeo Yamashita , Tomoo Murata
- 申请人: Kentaro Miyajima , Takeo Yamashita , Tomoo Murata
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JPJP2008-273726 20081024
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C7/00 ; G11C8/08 ; G11C17/18
摘要:
In a configuration having a nonvolatile memory and a volatile memory, when storage information of the nonvolatile memory is changed and an abnormal operation occurs due to temporary blackout, α-ray or others, the abnormal operation is recovered to a normal operation regardless of the presence of the detection of the abnormal operation. A reset to be inputted to the nonvolatile memory is collectively transmitted for each 1 bit, each 1 word or each predetermined arbitrary bit, and the collectively transmitted reset serving as one unit is periodically transmitted, so that the abnormal operation is recovered to a normal operation without input signals from outside even if the storage information of the nonvolatile memory is changed due to temporary blackout, α-ray or others.
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