- 专利标题： STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS
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申请号： US12262262申请日： 2008-10-31
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公开(公告)号： US20100110758A1公开(公告)日： 2010-05-06
- 发明人: Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
- 申请人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
- 申请人地址： US CA Scotts Valley
- 专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人地址： US CA Scotts Valley
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L47/00
摘要：
A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
公开/授权文献
- US07791925B2 Structures for resistive random access memory cells 公开/授权日：2010-09-07
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