发明申请
- 专利标题： CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK
- 专利标题（中）： 联系方式与转换ETCH反馈
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申请号： US12262860申请日： 2008-10-31
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公开(公告)号： US20100112729A1公开(公告)日： 2010-05-06
- 发明人: Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
- 申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
公开/授权文献
- US07998869B2 Contact patterning method with transition etch feedback 公开/授权日：2011-08-16