发明申请
- 专利标题: SEMICONDUCTOR DEVICE HAVING HETERO JUNCTION
- 专利标题(中): 具有异常结的半导体器件
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申请号: US12595253申请日: 2008-04-07
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公开(公告)号: US20100117119A1公开(公告)日: 2010-05-13
- 发明人: Tsutomu Uesugi , Kenji Ito , Osamu Ishiguro , Tetsu Kachi , Masahiro Sugimoto
- 申请人: Tsutomu Uesugi , Kenji Ito , Osamu Ishiguro , Tetsu Kachi , Masahiro Sugimoto
- 申请人地址: JP AICHI-GUN JP TOYOTA-SHI
- 专利权人: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址: JP AICHI-GUN JP TOYOTA-SHI
- 优先权: JP2007-101346 20070409
- 国际申请: PCT/JP2008/056869 WO 20080407
- 主分类号: H01L29/778
- IPC分类号: H01L29/778
摘要:
A semiconductor device 10 is provided with a first hetero junction 40b configured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junction 50b configured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrode 58 facing the second hetero junction 50b. The second hetero junction 50b is configured to be electrically connected to the first hetero junction 40b. The first hetero junction 40b is a c-plane and the second hetero junction 50b is either an a-plane or an m-plane.
公开/授权文献
- US08299498B2 Semiconductor device having hetero junction 公开/授权日:2012-10-30