发明申请
- 专利标题： FILM FORMING METHOD FOR A SEMICONDUCTOR
- 专利标题（中）： 一种半导体薄膜成型方法
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申请号： US12452784申请日： 2008-07-24
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公开(公告)号： US20100117204A1公开(公告)日： 2010-05-13
- 发明人: Takaaki Matsuoka , Kohei Kawamura
- 申请人： Takaaki Matsuoka , Kohei Kawamura
- 申请人地址： JP Minato-Ku
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-Ku
- 优先权： US12008770 20080114
- 国际申请： PCT/US2008/009044 WO 20080724
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.
公开/授权文献
- US08435882B2 Film forming method for a semiconductor 公开/授权日：2013-05-07
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