Invention Application
- Patent Title: Process for producing zinc oxide varistor
- Patent Title (中): 生产氧化锌压敏电阻的工艺
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Application No.: US12458369Application Date: 2009-07-09
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Publication No.: US20100117271A1Publication Date: 2010-05-13
- Inventor: Ching-Hohn Lien , Jie-An Zhu , Cheng-Tsung Kuo , Jiu-Nan Lin , Zhi-Xian Xu , Hong-Zong Xu , Ting-Yi Fang , Xing-Xiang Huang
- Applicant: Ching-Hohn Lien , Jie-An Zhu , Cheng-Tsung Kuo , Jiu-Nan Lin , Zhi-Xian Xu , Hong-Zong Xu , Ting-Yi Fang , Xing-Xiang Huang
- Applicant Address: TW Guishan Shiang
- Assignee: SFI Electronics Technology Inc.
- Current Assignee: SFI Electronics Technology Inc.
- Current Assignee Address: TW Guishan Shiang
- Priority: TW097126196 20081107
- Main IPC: B28B1/00
- IPC: B28B1/00

Abstract:
A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism.
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