发明申请
- 专利标题: MANUFACTURING METHOD OF NITRIDE CRYSTALLINE FILM, NITRIDE FILM AND SUBSTRATE STRUCTURE
- 专利标题(中): 硝酸盐膜,氮化物膜和底层结构的制造方法
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申请号: US12399036申请日: 2009-03-06
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公开(公告)号: US20100119845A1公开(公告)日: 2010-05-13
- 发明人: Cheng-Huang Kuo , Chi-Wen Kuo , Chun-Ju Tun
- 申请人: Cheng-Huang Kuo , Chi-Wen Kuo , Chun-Ju Tun
- 申请人地址: TW Taoyuan
- 专利权人: NATIONAL CENTRAL UNIVERSITY
- 当前专利权人: NATIONAL CENTRAL UNIVERSITY
- 当前专利权人地址: TW Taoyuan
- 优先权: TW97143404 20081110
- 主分类号: B32B17/06
- IPC分类号: B32B17/06 ; H01L21/20 ; C01B21/00 ; B32B9/04 ; B32B15/04
摘要:
A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.