Light-emitting diode chip structure and fabrication method thereof
    3.
    发明授权
    Light-emitting diode chip structure and fabrication method thereof 有权
    发光二极管芯片结构及其制造方法

    公开(公告)号:US08253160B2

    公开(公告)日:2012-08-28

    申请号:US13050677

    申请日:2011-03-17

    IPC分类号: H01L33/20

    摘要: A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

    摘要翻译: 提供了包括导电基板,半导体堆叠层和图案化晶种层的发光二极管芯片结构。 导电基板具有表面。 表面具有交替地分布在表面上的第一区域和第二区域。 半导体层叠层设置在导电性基板上,导电性基板的表面面向半导体层叠层。 图案化晶种层设置在导电基板的表面的第一区域上,并且在导电基板和半导体堆叠层之间。 图案化晶种层将半导体层叠层与第一区域分开。 半导体堆叠层覆盖图案化晶种层和第二区域,并且通过第二区域电连接到导电基板。 还提供了发光二极管芯片结构的制造方法。

    HIGH BRIGHT LIGHT EMITTING DIODE
    4.
    发明申请
    HIGH BRIGHT LIGHT EMITTING DIODE 审中-公开
    高亮度发光二极管

    公开(公告)号:US20120168712A1

    公开(公告)日:2012-07-05

    申请号:US13329704

    申请日:2011-12-19

    IPC分类号: H01L33/04 H01L33/60

    CPC分类号: H01L33/382 H01L33/46

    摘要: A high bright LED comprises a substrate, a conductive layer, a first semiconductor layer, a luminous layer, a second semiconductor layer, a first electrode, a second electrode and an insulation structure. The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer of the substrate in order. The first electrode is electrically connected to the conductive layer The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure comprises at least two passivation layers peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance.

    摘要翻译: 高亮度LED包括基板,导电层,第一半导体层,发光层,第二半导体层,第一电极,第二电极和绝缘结构。 导电层,第一半导体层,发光层和第二半导体层依次从衬底的上焊料层向上设置。 第一电极电连接到导电层。第二电极穿过导电层,第一半导体层和发光层,以使上焊料和第二半导体层电连接。 绝缘结构包括至少两个钝化层,其外围地缠绕第二电极。 至少两个钝化层的厚度符合分布布拉格反射技术,以使钝化层联合用作具有高反射率的反射器。

    Manufacturing method of nitride crystalline film, nitride film and substrate structure
    5.
    发明授权
    Manufacturing method of nitride crystalline film, nitride film and substrate structure 有权
    氮化物结晶膜,氮化物膜和衬底结构的制造方法

    公开(公告)号:US08173462B2

    公开(公告)日:2012-05-08

    申请号:US12399036

    申请日:2009-03-06

    IPC分类号: H01L21/306 H01L21/465

    摘要: A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.

    摘要翻译: 氮化物结晶膜的制造方法包括以下步骤。 首先,提供基板。 接下来,在基板上形成第一氮化物结晶膜。 然后在第一氮化物晶体膜上形成图案化掩模。 图案化掩模覆盖第一氮化物结晶膜的第一部分并暴露第一氮化物结晶膜的第二部分。 之后,蚀刻第二部分,并保持第一部分。 之后,去除图案化的掩模。 然后蚀刻第一部分以形成多个氮化物晶核。 接下来,在基板上形成第二氮化物结晶膜,并且使第二氮化物结晶膜覆盖氮化物晶核。 还提供了氮化物膜和衬底结构。

    FLEXIBLE LIGHT-EMITTING APPARATUS
    6.
    发明申请
    FLEXIBLE LIGHT-EMITTING APPARATUS 失效
    柔性发光装置

    公开(公告)号:US20100238683A1

    公开(公告)日:2010-09-23

    申请号:US12426962

    申请日:2009-04-21

    IPC分类号: H01L33/00

    CPC分类号: F21V7/04 G02B6/001 Y10S362/80

    摘要: A flexible light-emitting apparatus including a side light-emitting flexible light guide rod, two light emitting diodes, and two lenses is provided. The side light-emitting flexible light guide rod has a first end, a second end opposite to the first end, and a light-emitting surface connecting the first and the second ends. The LEDs are respectively disposed beside the first end and the second end and adapted for emitting light beams toward the side light-emitting flexible light guide rod, respectively. One of the lenses is located between the first end and the LED disposed beside the first end, and the other lens is located between the second end and the LED disposed beside the second end. Each of the light beams enters the side light-emitting flexible light guide rod through the corresponding lens and is transmitted to the outside of the side light-emitting flexible light guide rod through the light-emitting surface.

    摘要翻译: 提供了包括侧发光柔性导光杆,两个发光二极管和两个透镜的柔性发光装置。 侧发光柔性导光杆具有第一端,与第一端相对的第二端和连接第一端和第二端的发光面。 LED分别设置在第一端和第二端的旁边,并且分别用于朝向侧面发光柔性导光棒发射光束。 其中一个透镜位于第一端和设置在第一端旁边的LED之间,另一透镜位于第二端和位于第二端旁边的LED之间。 每个光束通过相应的透镜进入侧发光柔性导光杆,并通过发光表面传输到侧发光柔性导光杆的外侧。

    Electrical appliance housing having an indirect magnetic controlling kit
    7.
    发明申请
    Electrical appliance housing having an indirect magnetic controlling kit 审中-公开
    电器外壳具有间接磁性控制套件

    公开(公告)号:US20090052127A1

    公开(公告)日:2009-02-26

    申请号:US11845038

    申请日:2007-08-25

    申请人: CHI-WEN KUO

    发明人: CHI-WEN KUO

    IPC分类号: H05K5/03 H05K5/00

    CPC分类号: H05K5/06 H04M1/18

    摘要: This invention provides an electrical appliance housing comprising a main body and a lid. At least one magnetic controlling assembly is provided on the housing, comprising a sliding key that shifts in a sliding groove. The sliding key further includes a pair of controlling magnets with opposing magnetic polarity. An actuating magnet is installed inside of the housing and corresponds to a specific controlling key of the electrical appliance. Shifting the sliding key will produce a magnetic force relative to the actuating magnet, and this force in turn activates the controlling key of the electrical appliance. In addition, at least one functional device is installed on the lid that corresponds to the specific functional key of the electrical appliance, comprising a pair of blind holes situated so to correspond with one another. An actuating magnet is installed in the inner hole and a controlling magnet is fixed on the bottom of the sliding key which has the same magnetic polarity with said actuating magnet. Placing the controlling magnet opposite the actuating magnet can control the functional key. Because the housing of the present invention has not penetrated by any holes, the electrical appliance is indirectly controlled by the magnetic operating kits.

    摘要翻译: 本发明提供了一种包括主体和盖子的电器外壳。 至少一个磁性控制组件设置在壳体上,包括在滑动槽中移动的滑动键。 滑动键还包括一对具有相反磁极性的控制磁体。 驱动磁铁安装在壳体的内部,对应于电器的特定控制键。 移动滑动键将产生相对于致动磁体的磁力,并且该力又起动电器的控制键。 此外,至少一个功能装置安装在与电器具的特定功能键相对应的盖上,包括一对彼此对应的盲孔。 驱动磁铁安装在内孔中,控制磁铁固定在与所述致动磁体具有相同磁极性的滑动键的底部上。 将控制磁铁放置在驱动磁铁对面可控制功能键。 因为本发明的壳体没有被任何孔渗透,所以电气设备由磁性操作套件间接控制。

    Flexible light-emitting apparatus
    9.
    发明授权
    Flexible light-emitting apparatus 失效
    柔性发光装置

    公开(公告)号:US07993046B2

    公开(公告)日:2011-08-09

    申请号:US12426962

    申请日:2009-04-21

    IPC分类号: F21V7/04 H01L33/00

    CPC分类号: F21V7/04 G02B6/001 Y10S362/80

    摘要: A flexible light-emitting apparatus including a side light-emitting flexible light guide rod, two light emitting diodes, and two lenses is provided. The side light-emitting flexible light guide rod has a first end, a second end opposite to the first end, and a light-emitting surface connecting the first and the second ends. The LEDs are respectively disposed beside the first end and the second end and adapted for emitting light beams toward the side light-emitting flexible light guide rod, respectively. One of the lenses is located between the first end and the LED disposed beside the first end, and the other lens is located between the second end and the LED disposed beside the second end. Each of the light beams enters the side light-emitting flexible light guide rod through the corresponding lens and is transmitted to the outside of the side light-emitting flexible light guide rod through the light-emitting surface.

    摘要翻译: 提供了包括侧发光柔性导光杆,两个发光二极管和两个透镜的柔性发光装置。 侧发光柔性导光杆具有第一端,与第一端相对的第二端和连接第一端和第二端的发光面。 LED分别设置在第一端和第二端的旁边,并且分别用于朝向侧面发光柔性导光棒发射光束。 其中一个透镜位于第一端和设置在第一端旁边的LED之间,另一透镜位于第二端和位于第二端旁边的LED之间。 每个光束通过相应的透镜进入侧发光柔性导光杆,并通过发光表面传输到侧发光柔性导光杆的外侧。

    MANUFACTURING METHOD OF NITRIDE CRYSTALLINE FILM, NITRIDE FILM AND SUBSTRATE STRUCTURE
    10.
    发明申请
    MANUFACTURING METHOD OF NITRIDE CRYSTALLINE FILM, NITRIDE FILM AND SUBSTRATE STRUCTURE 有权
    硝酸盐膜,氮化物膜和底层结构的制造方法

    公开(公告)号:US20100119845A1

    公开(公告)日:2010-05-13

    申请号:US12399036

    申请日:2009-03-06

    摘要: A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.

    摘要翻译: 氮化物结晶膜的制造方法包括以下步骤。 首先,提供基板。 接下来,在基板上形成第一氮化物结晶膜。 然后在第一氮化物晶体膜上形成图案化掩模。 图案化掩模覆盖第一氮化物结晶膜的第一部分并暴露第一氮化物结晶膜的第二部分。 之后,蚀刻第二部分,并保持第一部分。 之后,去除图案化的掩模。 然后蚀刻第一部分以形成多个氮化物晶核。 接下来,在基板上形成第二氮化物结晶膜,并且使第二氮化物结晶膜覆盖氮化物晶核。 还提供了氮化物膜和衬底结构。