A semiconductor integrated circuit device includes: an electrostatic discharge (ESD) impurity region formed in a substrate; a bump formed on the substrate; and a first wiring layer and a second wiring layer formed at the same level under the bump. The first and second wiring layers are separated from each other, and at least part of each of the first and second wiring layers are overlapped by the bump. The first wiring layer is electrically connected to the ESD impurity region and the bump, and the second wiring layer is insulated from the bump.