发明申请
US20100124618A1 Method of Forming Insulation Film Using Plasma Treatment Cycles
有权
使用等离子体处理循环形成绝缘膜的方法
- 专利标题: Method of Forming Insulation Film Using Plasma Treatment Cycles
- 专利标题(中): 使用等离子体处理循环形成绝缘膜的方法
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申请号: US12618419申请日: 2009-11-13
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公开(公告)号: US20100124618A1公开(公告)日: 2010-05-20
- 发明人: Akiko Kobayashi , Akira Shimizu , Kuo-wei Hong , Nobuyoshi Kobayashi , Atsuki Fukazawa
- 申请人: Akiko Kobayashi , Akira Shimizu , Kuo-wei Hong , Nobuyoshi Kobayashi , Atsuki Fukazawa
- 申请人地址: JP Tokyo
- 专利权人: ASM JAPAN K.K.
- 当前专利权人: ASM JAPAN K.K.
- 当前专利权人地址: JP Tokyo
- 主分类号: B05D3/04
- IPC分类号: B05D3/04
摘要:
A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.