公开(公告)号：US20140017414A1

公开(公告)日：2014-01-16

申请号：US13550419

申请日：2012-07-16

申请人： Atsuki Fukazawa ,  Hideaki Fukuda

发明人： Atsuki Fukazawa ,  Hideaki Fukuda

IPC分类号： C23C16/40

CPC分类号： C23C16/45542 ,  C23C16/403

摘要： A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.

摘要翻译： 通过PEALD在具有图案化底层的基板上形成氧化铝保形膜的方法包括：吸附含有Al-C键和Al-O-C或Al-N-C键的Al前体; 提供氧化气体和惰性气体; 对反应气体和反应辅助气体施加RF功率以使吸附的前体与表面上的反应气体反应，从而在衬底的图案化底层上形成氧化铝的保形膜，其中衬底保持在 温度约为200℃以下。

公开(公告)号：US07825040B1

公开(公告)日：2010-11-02

申请号：US12489252

申请日：2009-06-22

申请人： Atsuki Fukazawa ,  Hisashi Tazawa ,  Jeongseok Ha ,  Shintaro Ueda

发明人： Atsuki Fukazawa ,  Hisashi Tazawa ,  Jeongseok Ha ,  Shintaro Ueda

IPC分类号： H01L21/31

CPC分类号： H01L21/31608 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02337

摘要： A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.

摘要翻译： 用绝缘膜填充凹部的方法包括：将不含Si-C键或C-C键的烷氧基硅烷或氨基硅烷前体引入反应室，其中放置具有包括凹陷的不规则表面的基板; 以及在基板的不规则表面上沉积可流动的含Si绝缘膜，以通过在-50℃至100℃的等离子体反应来填充凹槽。

公开(公告)号：US20100184302A1

公开(公告)日：2010-07-22

申请号：US12357174

申请日：2009-01-21

申请人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

发明人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

IPC分类号： H01L21/469

CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US20100124618A1

公开(公告)日：2010-05-20

申请号：US12618419

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

IPC分类号： B05D3/04

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/56

摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。

公开(公告)号：US07354873B2

公开(公告)日：2008-04-08

申请号：US11465751

申请日：2006-08-18

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02348 ,  H01L2924/12044

摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US20070004204A1

公开(公告)日：2007-01-04

申请号：US11465751

申请日：2006-08-18

申请人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

发明人： Atsuki Fukazawa ,  Nobuo Matsuki ,  Seijiro Umemoto

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02348 ,  H01L2924/12044

摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US06759344B2

公开(公告)日：2004-07-06

申请号：US10309401

申请日：2002-12-03

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC分类号： H01L2131

CPC分类号： C23C16/45523 ,  C23C16/401

摘要： An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

摘要翻译： 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

公开(公告)号：US08784950B2

公开(公告)日：2014-07-22

申请号：US13550419

申请日：2012-07-16

申请人： Atsuki Fukazawa ,  Hideaki Fukuda

发明人： Atsuki Fukazawa ,  Hideaki Fukuda

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/45542 ,  C23C16/403

摘要： A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.

摘要翻译： 通过PEALD在具有图案化底层的基板上形成氧化铝保形膜的方法包括：吸附含有Al-C键和Al-O-C或Al-N-C键的Al前体; 提供氧化气体和惰性气体; 对反应气体和反应辅助气体施加RF功率以使吸附的前体与表面上的反应气体反应，从而在衬底的图案化底层上形成氧化铝的保形膜，其中衬底保持在 温度约为200℃以下。

公开(公告)号：US08241991B2

公开(公告)日：2012-08-14

申请号：US12718731

申请日：2010-03-05

申请人： Julian J. Hsieh ,  Nobuyoshi Kobayashi ,  Akira Shimizu ,  Kiyohiro Matsushita ,  Atsuki Fukazawa

发明人： Julian J. Hsieh ,  Nobuyoshi Kobayashi ,  Akira Shimizu ,  Kiyohiro Matsushita ,  Atsuki Fukazawa

IPC分类号： H01L21/76

CPC分类号： H01L21/768

摘要： A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.

摘要翻译： 一种用气隙形成互连结构的方法，包括：提供在衬底上形成沟槽的结构; 通过等离子体增强的原子层沉积在沟槽的侧壁上沉积间隔氧化物层作为侧壁间隔物; 用铜填充具有侧壁间隔物的沟槽; 去除侧壁间隔件以形成气隙结构; 并且封装气隙结构，其中在填充的铜和沟槽的侧壁之间形成气隙。

公开(公告)号：US20100291713A1

公开(公告)日：2010-11-18

申请号：US12467017

申请日：2009-05-15

申请人： Woo-Jin Lee ,  Atsuki Fukazawa

发明人： Woo-Jin Lee ,  Atsuki Fukazawa

IPC分类号： H01L21/66

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0337

摘要： A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside which the semiconductor substrate is placed; depositing a conformal amorphous hydrogenated carbon layer on the irregular surface of the semiconductor substrate by plasma CVD; and controlling the deposition of the conformal ratio of the depositing conformal amorphous hydrogenated carbon layer. The controlling includes (a) adjusting a step coverage of the conformal amorphous hydrogenated carbon layer to about 30% or higher as a function of substrate temperature, and (b) adjusting a conformal ratio of the conformal amorphous hydrogenated carbon layer to about 0.9 to about 1.1 as a function of RF power and/or argon gas flow rate,

摘要翻译： 在半导体衬底的不规则表面上形成共形无定形氢化碳层的方法包括：使含烃前体气化; 将蒸发的前体和氩气引入其中放置半导体衬底的CVD反应室; 通过等离子体CVD在半导体衬底的不规则表面上沉积共形无定形氢化碳层; 并控制沉积的共形无定形氢化碳层的共形比的沉积。 控制包括（a）将保形无定形氢化碳层的台阶覆盖率调整为基板温度的函数为约30％或更高，和（b）调整共形无定形氢化碳层的共形比为约0.9至约 1.1作为RF功率和/或氩气流量的函数，