发明申请
- 专利标题： SELF-ALIGNED BIPOLAR TRANSISTOR STRUCTURE
- 专利标题（中）： 自对准双极晶体管结构
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申请号： US12692892申请日： 2010-01-25
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公开(公告)号： US20100127352A1公开(公告)日： 2010-05-27
- 发明人: Monir El-Diwany , Alexei Sadovnikov , Jamal Ramdani
- 申请人： Monir El-Diwany , Alexei Sadovnikov , Jamal Ramdani
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L29/732
- IPC分类号： H01L29/732 ; H01L29/73
摘要：
A bipolar transistor structure comprises a semiconductor substrate having a first conductivity type, a collector region having a second conductivity type that is opposite the first conductivity type formed in a substrate active device region defined by isolation dielectric material formed in an upper surface of the semiconductor substrate, a base region that includes an intrinsic base region having the first conductivity type formed over the collector region and an extrinsic base region having the second conductivity type formed over the isolation dielectric material, and a sloped in-situ doped emitter plug having the second conductivity type formed on the intrinsic base region.
公开/授权文献
- US08148799B2 Self-aligned bipolar transistor structure 公开/授权日：2012-04-03
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