发明申请
US20100127596A1 Micro-Electromechanical Resonators Having Boron-Doped and Boron-Assisted Aluminum-Doped Resonator Bodies Therein 有权
具有硼掺杂和硼辅助铝掺杂谐振器体的微机电谐振器

  • 专利标题: Micro-Electromechanical Resonators Having Boron-Doped and Boron-Assisted Aluminum-Doped Resonator Bodies Therein
  • 专利标题(中): 具有硼掺杂和硼辅助铝掺杂谐振器体的微机电谐振器
  • 申请号: US12570623
    申请日: 2009-09-30
  • 公开(公告)号: US20100127596A1
    公开(公告)日: 2010-05-27
  • 发明人: Farrokh AyaziAshwin Samarao
  • 申请人: Farrokh AyaziAshwin Samarao
  • 主分类号: H02N11/00
  • IPC分类号: H02N11/00 H01L21/22
Micro-Electromechanical Resonators Having Boron-Doped and Boron-Assisted Aluminum-Doped Resonator Bodies Therein
摘要:
A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×1018 cm−3 and even greater than about 1×1019 cm−3, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.
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