发明申请
- 专利标题: Micro-Electromechanical Resonators Having Boron-Doped and Boron-Assisted Aluminum-Doped Resonator Bodies Therein
- 专利标题(中): 具有硼掺杂和硼辅助铝掺杂谐振器体的微机电谐振器
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申请号: US12570623申请日: 2009-09-30
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公开(公告)号: US20100127596A1公开(公告)日: 2010-05-27
- 发明人: Farrokh Ayazi , Ashwin Samarao
- 申请人: Farrokh Ayazi , Ashwin Samarao
- 主分类号: H02N11/00
- IPC分类号: H02N11/00 ; H01L21/22
摘要:
A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×1018 cm−3 and even greater than about 1×1019 cm−3, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.
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