发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12692712申请日： 2010-01-25
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公开(公告)号： US20100129938A1公开(公告)日： 2010-05-27
- 发明人: Yoshinori Kumura , Yoshiro Shimojo
- 申请人： Yoshinori Kumura , Yoshiro Shimojo
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-243904 20070920
- 主分类号： H01L21/77
- IPC分类号： H01L21/77
摘要：
A semiconductor device includes: a semiconductor substrate and a transistor formed on the semiconductor substrate. The semiconductor device also includes: a first interlayer insulation film formed on the semiconductor substrate including the upper portion of the transistor, a first contact formed to be connected through the first interlayer insulation film to the transistor, a ferroelectric capacitor formed to be connected to the first contact, a second interlayer insulation film formed on the first interlayer insulation film, and a second contact formed to connect the ferroelectric capacitor to a wiring through the second interlayer insulation film. The contact surfaces between the second contact and the ferroelectric capacitor have the same planar shape.
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