发明申请
- 专利标题: PATTERNING METHOD
- 专利标题(中): 绘图方法
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申请号: US12441754申请日: 2008-06-06
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公开(公告)号: US20100130015A1公开(公告)日: 2010-05-27
- 发明人: Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
- 申请人: Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-153184 20070608
- 国际申请: PCT/JP2008/060482 WO 20080606
- 主分类号: H01L21/32
- IPC分类号: H01L21/32
摘要:
Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
公开/授权文献
- US07989354B2 Patterning method 公开/授权日:2011-08-02