A phase change memory is provided, which includes a semiconductor substrate having a first conductive type, buried word lines having a second conductive type, doped semiconductor layers having the first conductive type, memory cells, metal silicide layers, and bit lines. The buried word lines are disposed in the semiconductor substrate. Each buried word line includes a line-shaped main portion extended along a first direction and protrusion portions. Each protrusion portion is connected to one long side of the line-shaped main portion. Each doped semiconductor layer is disposed on one protrusion portion. Each memory cell includes a phase change material layer and is disposed on and electrically connected to one of the doped semiconductor layers. Each metal silicide layer is disposed on one of the line-shaped main portions. Each bit line is connected to memory cells disposed on the word lines in a second direction substantially perpendicular to the first direction.