发明申请
- 专利标题： Method of Reducing Delamination in the Fabrication of Small-Pitch Devices
- 专利标题（中）： 减小小间距器件制造中分层的方法
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申请号： US12326099申请日： 2008-12-01
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公开(公告)号： US20100136791A1公开(公告)日： 2010-06-03
- 发明人: Chih-Yu Lai , Cheng-Ta Wu , Neng-Kuo Chen , Cheng-Yuan Tsai
- 申请人： Chih-Yu Lai , Cheng-Ta Wu , Neng-Kuo Chen , Cheng-Yuan Tsai
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/30
摘要：
A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask layer; patterning the second hard mask layer to form a hard mask; and, after the step of patterning the second hard mask layer, baking the substrate, the first hard mask layer, and the hard mask. After the step of baking, a spacer layer is formed, which includes a first portion on a top of the hard mask, and a second portion and a third portion on opposite sidewalls of the hard mask. The method further includes removing the first portion of the spacer layer; removing the hard mask; and using the second portion and the third portion of the spacer layer as masks to pattern the first hard mask layer.
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