发明申请
US20100138588A1 MEMORY CONTROLLER AND A METHOD OF OPERATING AN ELECTRICALLY ALTERABLE NON-VOLATILE MEMORY DEVICE
审中-公开
存储器控制器和操作电动可变非易失性存储器件的方法
- 专利标题: MEMORY CONTROLLER AND A METHOD OF OPERATING AN ELECTRICALLY ALTERABLE NON-VOLATILE MEMORY DEVICE
- 专利标题(中): 存储器控制器和操作电动可变非易失性存储器件的方法
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申请号: US12326811申请日: 2008-12-02
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公开(公告)号: US20100138588A1公开(公告)日: 2010-06-03
- 发明人: Fong Long Lin , Je-Hurn Shieh
- 申请人: Fong Long Lin , Je-Hurn Shieh
- 专利权人: Silicon Storage Technology, Inc.
- 当前专利权人: Silicon Storage Technology, Inc.
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F12/00
摘要:
A controller operates a NAND non-volatile memory device which has an array of non-volatile memory cells. The array of non-volatile memory cells is susceptible to suffering loss of data stored in one or more memory cells of the array. The controller interfaces with a host device and receives from the host device a time-stamp signal. The controller comprises a processor, and a memory having program code stored therein for execution by the processor. The program code is configured to receive by the controller the time stamp signal from the host device; to compare the received time stamp signal with a stored signal wherein the stored signal is a time stamp signal received earlier in time by the controller from the host device; and to determine when to perform a data retention and refresh operation for data stored in the memory array based upon the comparing step.
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