发明申请
- 专利标题： METHODS AND APPARATUS FOR MAKING GALLIUM NITRIDE AND GALLIUM ALUMINUM NITRIDE THIN FILMS
- 专利标题（中）： 制备氮化铝和氮化铝薄膜的方法和装置
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申请号： US12633279申请日： 2009-12-08
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公开(公告)号： US20100139554A1公开(公告)日： 2010-06-10
- 发明人: Morteza Farnia , Mehran Moalem
- 申请人： Morteza Farnia , Mehran Moalem
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C30B25/10
- IPC分类号： C30B25/10
摘要：
Methods and apparatus for forming gallium nitride and gallium aluminum nitride films, such as gallium nitride and gallium aluminum nitride epitaxial layers on a substrate are provided, including providing a substrate; and exposing the substrate to gallium vapor and an NH3 plasma so as to form a gallium nitride epitaxial layer on at least a portion of the substrate.
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