发明申请
US20100140066A1 VERY LOW VOLTAGE, ULTRAFAST NANOELECTROMECHANICAL SWITCHES AND RESONANT SWITCHES 有权
非常低电压,超高频纳米电子开关和谐波开关

VERY LOW VOLTAGE, ULTRAFAST NANOELECTROMECHANICAL SWITCHES AND RESONANT SWITCHES
摘要:
The invention provides lateral nanoelectromechanical switches useful for integration into circuitry fabricated using standard semiconductor processing methods, or using techniques compatible with the mainstream semiconductor processing technologies. Methods of fabricating the switches are described. Some exemplary designs for two and three terminal switches are provided. Descriptions of structural features and the operating parameters for some exemplary switches are given. The switches are expected to be compatible with circuitry that is operable in computer-based systems.
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