Generation of dislocation and increase of diffusion resistance at edge portions of source/drain regions in a CMIS are prevented. When source/drain regions in a CMIS are formed, argon is implanted to a P-well layer as a dislocation-suppressing element and nitrogen is implanted to an N-well layer as a dislocation-suppressing element before an ion implantation of impurities to a silicon substrate. In this manner, by separately implanting dislocation-suppressing elements suitable for each of the P-well layer and the N-well layer as well as suppressing the generation of dislocation, increase of diffusion resistance can be suppressed, yield can be improved, and the reliability of devices can be increased.