发明申请
- 专利标题: SEMICONDUCTOR DEVICES AND SYSTEMS
- 专利标题(中): 半导体器件和系统
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申请号: US12329841申请日: 2008-12-08
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公开(公告)号: US20100140730A1公开(公告)日: 2010-06-10
- 发明人: Stanislav Ivanovich Soloviev , Ho-Young Cha , Peter Micah Sandvik , Alexey Vert , Jody Alan Fronheiser
- 申请人: Stanislav Ivanovich Soloviev , Ho-Young Cha , Peter Micah Sandvik , Alexey Vert , Jody Alan Fronheiser
- 申请人地址: US NY SCHENECTADY
- 专利权人: GENERAL ELECTRIC COMPANY
- 当前专利权人: GENERAL ELECTRIC COMPANY
- 当前专利权人地址: US NY SCHENECTADY
- 主分类号: H01L31/107
- IPC分类号: H01L31/107 ; H01L31/02 ; H01L29/06
摘要:
A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.
公开/授权文献
- US08198650B2 Semiconductor devices and systems 公开/授权日:2012-06-12
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